HEMT 【Heterostructure FET】
full spelling ： High Electron Mobility Transistor
High Electron Mobility Transistor is a type of transistor. High Electron Mobility Transistor or HEMT is a field effect transistor with a junction between two materials with different band gaps (heterojunction) as the channel instead of an n-doped region.
High Electron Mobility Transistor is a transistor design that is similar to MESFET (Metal-Semiconductor Field Effect Transistor) but provides higher performance. HEMT devices are found in many types of equipment ranging from cell phones to microwave amplifiers.