IGBT
full spelling ： Insulated Gate Bipolar Transistor
Insulated Gate Bipolar Transistor is a semiconductor device that combines the positive attributes of bipolar junction transistors (BJT) and Metal Oxide Semiconductor Field Effect Transistors (MOSFET). It combines the simple gate drive characteristics of the MOSFET with the high current and low saturation voltage capability of bipolar transistor.
Some of the advantageous of Insulated Gate Bipolar Transistors include a MOS input gate, high switching speed, low conduction voltage drop, high current carrying capability, and a high degree of robustness. The IGBT is used in medium to high power applications such as Switched-mode power supply, traction motor control and induction heating.